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Other articles related with "electrostatic discharge"：
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48501 |
Tian-Tian Xie(谢田田), Jun Wang(王俊), Fei-Bo Du(杜飞波), Yang Yu(郁扬), Yan-Fei Cai(蔡燕飞), Er-Yuan Feng(冯二媛), Fei Hou(侯飞), and Zhi-Wei Liu(刘志伟) |
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Dynamic electrostatic-discharge path investigation relied on different impact energies in metal-oxide-semiconductor circuits |
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Chin. Phys. B
2023 Vol.32 (4): 48501-048501
[Abstract]
(226)
[HTML 1 KB]
[PDF 2725 KB]
(122)
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28502 |
Yuankang Chen(陈远康), Yuanliang Zhou(周远良), Jie Jiang(蒋杰), Tingke Rao(饶庭柯), Wugang Liao(廖武刚), and Junjie Liu(刘俊杰) |
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Enhancement of holding voltage by a modified low-voltage trigger silicon-controlled rectifier structure for electrostatic discharge protection |
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Chin. Phys. B
2023 Vol.32 (2): 28502-028502
[Abstract]
(260)
[HTML 0 KB]
[PDF 902 KB]
(271)
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78502 |
Xi-Kun Feng(冯希昆), Xiao-Feng Gu(顾晓峰), Qin-Ling Ma(马琴玲), Yan-Ni Yang(杨燕妮), and Hai-Lian Liang(梁海莲) |
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Design and investigation of novel ultra-high-voltage junction field-effect transistor embedded with NPN |
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Chin. Phys. B
2021 Vol.30 (7): 78502-078502
[Abstract]
(377)
[HTML 1 KB]
[PDF 1964 KB]
(106)
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67303 |
Jie Xu(许杰), Nai-Long He(何乃龙), Hai-Lian Liang(梁海莲), Sen Zhang(张森), Yu-De Jiang(姜玉德), and Xiao-Feng Gu(顾晓峰) |
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Terminal-optimized 700-V LDMOS with improved breakdown voltage and ESD robustness |
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Chin. Phys. B
2021 Vol.30 (6): 67303-067303
[Abstract]
(473)
[HTML 0 KB]
[PDF 1025 KB]
(113)
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98502 |
Wenqiang Song(宋文强), Fei Hou(侯飞), Feibo Du(杜飞波), Zhiwei Liu(刘志伟), Juin J. Liou(刘俊杰) |
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Enhanced gated-diode-triggered silicon-controlled rectifier for robust electrostatic discharge (ESD) protection applications |
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Chin. Phys. B
2020 Vol.29 (9): 98502-098502
[Abstract]
(765)
[HTML 0 KB]
[PDF 1050 KB]
(145)
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68503 |
Ling Zhu(朱玲), Hai-Lian Liang(梁海莲), Xiao-Feng Gu(顾晓峰), Jie Xu(许杰) |
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Design of a novel high holding voltage LVTSCR with embedded clamping diode |
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Chin. Phys. B
2020 Vol.29 (6): 68503-068503
[Abstract]
(559)
[HTML 1 KB]
[PDF 645 KB]
(111)
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77304 |
Zhao Qi(齐钊), Ming Qiao(乔明), Yitao He(何逸涛), Bo Zhang(张波) |
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High holding voltage SCR for robust electrostatic discharge protection |
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Chin. Phys. B
2017 Vol.26 (7): 77304-077304
[Abstract]
(668)
[HTML 1 KB]
[PDF 1057 KB]
(385)
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128501 |
Li-Zhong Zhang(张立忠), Yuan Wang(王源), Yan-Dong He(何燕冬) |
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Structure-dependent behaviors of diode-triggered silicon controlled rectifier under electrostatic discharge stress |
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Chin. Phys. B
2016 Vol.25 (12): 128501-128501
[Abstract]
(713)
[HTML 1 KB]
[PDF 2266 KB]
(289)
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108503 |
Zhang Li-Zhong (张立忠), Wang Yuan (王源), Lu Guang-Yi (陆光易), Cao Jian (曹健), Zhang Xing (张兴) |
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A novel diode string triggered gated-PiN junction device for electrostatic discharge protection in 65-nm CMOS technology |
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Chin. Phys. B
2015 Vol.24 (10): 108503-108503
[Abstract]
(654)
[HTML 1 KB]
[PDF 1613 KB]
(342)
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108502 |
Zhang Shuai (张帅), Dong Shu-Rong (董树荣), Wu Xiao-Jing (吴晓京), Zeng Jie (曾杰), Zhong Lei (钟雷), Wu Jian (吴健) |
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An improved GGNMOS triggered SCR for high holding voltage ESD protection applications |
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Chin. Phys. B
2015 Vol.24 (10): 108502-108502
[Abstract]
(649)
[HTML 1 KB]
[PDF 370 KB]
(515)
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47303 |
Ma Jin-Rong (马金荣), Qiao Ming (乔明), Zhang Bo (张波) |
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Novel substrate trigger SCR-LDMOS stacking structure for high-voltage ESD protection application |
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Chin. Phys. B
2015 Vol.24 (4): 47303-047303
[Abstract]
(772)
[HTML 0 KB]
[PDF 308 KB]
(777)
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2297 |
Wang Yuan(王源), Jia Song(贾嵩), Chen Zhong-Jian(陈中建), and Ji Li-Jiu(吉利久) |
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Low-parasitic ESD protection strategy for RF ICs in 0.35μm CMOS process |
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Chin. Phys. B
2006 Vol.15 (10): 2297-2305
[Abstract]
(1600)
[HTML 0 KB]
[PDF 488 KB]
(700)
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